Two‐dimensional electron gas in modulation‐doped, ordered‐disordered GaInP₂ homojunctions

Capacitance‐voltage (C‐V) profiling techniques and temperature‐dependent Hall and resistivity measurements have been used to characterize modulation‐doped ordered‐GaInP₂/disordered‐GaInP₂ homojunctions grown by metalorganic vapor phase epitaxy. The C‐V measurements showed a narrow profile at the homointerface with an order of magnitude reduction in carrier density within 3 nm. Typical two‐dimensional behavior was observed from Hall data showing sheet carrier densities as high as 3.6×10¹³ cm⁻² without carrier freeze out and constant mobilities around 900 cm² V⁻¹ s⁻¹ below T=100 K. The 300 K channel conductivity of this new junction is 3.2×10⁻³ Ω⁻¹, which is higher than reported in other two‐dimensional electron gases.