Fabrication of green light emitting ZnS:Tb thin film electroluminescent devices using atomic layer epitaxy is described. In this investigation, particular emphasis is placed on the effect of Tb doping profiles and concentrations on the emission characteristics. It is shown that rapid thermal anneal of these devices has a significant effect on their emission lifetimes.

Topics
Epitaxy, Annealing, Thin films
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© 1994 American Institute of Physics.
1994
American Institute of Physics
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