Long wavelength 1.3 μm gain coupled distributed feedback (GC‐DFB) lasers were realized by masked implantation enhanced intermixing. On the basis of this full planar technology GC‐DFB lasers with first and second order gratings were fabricated in the InGaAs/InGaAlAs system. The lasers show clear GC‐DFB laser emission with a single mode yield of 69% and remain single mode up to several times laser threshold. The results are in good agreement with the theoretical description of our gain coupled lasers by optical matrix theory.
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