The nonlinear absorption and refractive index spectra for [111]‐ and [001]‐grown (In,Ga)As/(Al,Ga)As single strained‐layer quantum‐well structures are calculated, for different photogenerated carrier densities. Screening of the strain‐induced electric field by photocarriers that have escaped from the [111]‐grown quantum well is shown to produce a similar magnitude of nonlinear refractive cross section to that of the conventional [001]‐grown quantum well.
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