Schottky enhancement of reacted NiAl/n‐GaAs contacts was demonstrated experimentally. The Schottky barrier height increases from 0.83 eV for the as‐deposited contacts to 0.96 eV when the contacts were annealed at 400 °C for 1 min. Formation of a high Al content (Al,Ga)As layer at the interface upon annealing was rationalized in terms of a thermodynamic/kinetic model. A (200) dark field cross‐sectional transmission electron microscopy image was used to show the presence of high Al content (Al,Ga)As at the interface.
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© 1994 American Institute of Physics.
1994
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