Thin YBa2Cu3O7−δ laser deposited films were patterned into devices consisting of ten parallel 1 μm wide strips. Nonequilibrium picosecond and bolometric photoresponses were studied by the use of 17 ps full width at half‐maximum laser pulses and amplitude modulated radiation from an AlGaAs laser up to 10 GHz and from a CO2 laser up to 1 GHz. The time and frequency domain measurements were in agreement. The fast response can be explained by electron heating. The use of low optical power and a sensitive measurement system excluded any nonlinear transient processes and kinetic inductance changes in the superconducting state. At 1 GHz modulation frequency, the responsivity was ∼1.2 V/W both for 0.8 and 10.6 μm wavelengths. The sensitivity of a fast and spectrally broadband infrared detector is discussed.
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30 May 1994
Research Article|
May 30 1994
Transient resistive photoresponse of YBa2Cu3O7−δ films using low power 0.8 and 10.6 μm laser radiation Available to Purchase
M. Lindgren;
M. Lindgren
Department of Optoelectronics and Electrical Measurements, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
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V. Trifonov;
V. Trifonov
Department of Optoelectronics and Electrical Measurements, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
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M. Zorin;
M. Zorin
Department of Optoelectronics and Electrical Measurements, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
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M. Danerud;
M. Danerud
Department of Physics, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
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D. Winkler;
D. Winkler
Department of Physics, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
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B. S. Karasik;
B. S. Karasik
Department of Physics, Moscow State Pedagogical University, 119435 Moscow, Russia
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G. N. Gol’tsman;
G. N. Gol’tsman
Department of Physics, Moscow State Pedagogical University, 119435 Moscow, Russia
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E. M. Gershenzon
E. M. Gershenzon
Department of Physics, Moscow State Pedagogical University, 119435 Moscow, Russia
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M. Lindgren
Department of Optoelectronics and Electrical Measurements, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
V. Trifonov
Department of Optoelectronics and Electrical Measurements, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
M. Zorin
Department of Optoelectronics and Electrical Measurements, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
M. Danerud
Department of Physics, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
D. Winkler
Department of Physics, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
B. S. Karasik
Department of Physics, Moscow State Pedagogical University, 119435 Moscow, Russia
G. N. Gol’tsman
Department of Physics, Moscow State Pedagogical University, 119435 Moscow, Russia
E. M. Gershenzon
Department of Physics, Moscow State Pedagogical University, 119435 Moscow, Russia
Appl. Phys. Lett. 64, 3036–3038 (1994)
Article history
Received:
January 26 1994
Accepted:
March 07 1994
Citation
M. Lindgren, V. Trifonov, M. Zorin, M. Danerud, D. Winkler, B. S. Karasik, G. N. Gol’tsman, E. M. Gershenzon; Transient resistive photoresponse of YBa2Cu3O7−δ films using low power 0.8 and 10.6 μm laser radiation. Appl. Phys. Lett. 30 May 1994; 64 (22): 3036–3038. https://doi.org/10.1063/1.111398
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