Femtosecond pulses from a Kerr–Lens mode‐locked Ti:sapphire laser are used to generate second harmonic from a series of native‐oxidized Si(100)/SiO2 and hydrogen‐terminated Si(100) samples prepared with systematically varied interfacial microroughness with root‐mean‐square feature heights ranging from 0.6 to 4.3 Å. Rotationally anisotropic second harmonic signals using different polarization configurations were measured in air and correlated with atomic force microscopy measurements. The results demonstrate rapid, noncontact, noninvasive measurement of Angstrom‐level Si(100)/SiO2 interface roughness by optical second harmonic generation.
REFERENCES
1.
S. Wolf and R. N. Tauber, in Silicon Processing for the VLSI Era (Lattice, Sunset Beach, CA, 1990), Vol. 2;
2.
T.
Ohmi
, M.
Miyashita
, M.
Itano
, T.
Imaoka
, and I.
Kawanabe
, IEEE Trans. Electron Devices
39
, 537
(1992
).3.
J. M. Bennett and L. Mattsson, in Introduction to Surface Roughness and Scattering (Optical Society of America, Washington, DC, 1989).
4.
Y. R. Shen, in Principles of Nonlinear Optics (Wiley, New York, 1984);
5.
L. L.
Kulyuk
, D. A.
Shutov
, E. E.
Strumban
, and O. A.
Aktsipetrov
, J. Opt. Soc. Am. B
8
, 1776
(1991
).6.
C. H.
Bjorkman
, T.
Yasuda
, C. E.
Shearon
, Jr., Y.
Ma
, G.
Lucovsky
, U.
Emmerichs
, C.
Meyer
, K.
Leo
, and H.
Kurz
, J. Vac. Sci. Technol. B
11
, 1521
(1993
).7.
G.
Lüpke
, D. J.
Bottomley
, and H. M.
van Driel
, Phys. Rev. B
47
, 10389
(1993
).8.
G.
Higashi
, Y. J.
Chabal
, G. W.
Trucks
, and K.
Ragavachari
, Appl. Phys. Lett.
56
, 656
(1990
);P.
Dumas
, Y. J.
Chabal
, and P.
Jacob
, Surf. Sci.
269/270
, 867
(1992
);K.
Sawara
, T.
Yasaka
, S.
Miyazaki
, and M.
Hirose
, Jpn. J. Appl. Phys.
31
, L931
(1992
).9.
10.
H. W. K.
Tom
, T. F.
Heinz
, and Y. R.
Shen
, Phys. Rev. Lett.
51
, 1983
(1983
);O. A.
Aktsipetrov
, I. M.
Baranova
, and Yu. A.
Il’inskii
, Sov. Phys. JETP
64
, 167
(1986
);J. E.
Sipe
, D. J.
Moss
, and H. M.
van Driel
, Phys. Rev. B
35
, 1129
(1987
).11.
T. F.
Heinz
, M. M. T.
Loy
, and S. S.
Iyer
, Mater. Res. Soc. Symp. Proc.
75
, 697
(1987
);R. W. J.
Hollering
, A. J.
Hoeven
, and J. M.
Lenssinck
, J. Vac. Sci. Technol. A
8
, 3194
(1990
).12.
Y. J.
Chabal
, and K.
Ragavachari
, Phys. Rev. Lett.
54
, 1055
(1985
);13.
M.
Niwano
, Y.
Takeda
, Y.
Ishibashi
, K.
Kurita
, and N.
Miyamoto
, J. Appl. Phys.
71
, 5646
(1992
).
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