Electron transport in GaAs‐based p‐i‐n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≂80 K. For an injected carrier density of n≂2.2×1018 cm−3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as Vd=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.
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