We report the experimental realization of asymmetric stepped InGaAs/InGaAsP quantum wells. The structure was designed to optimize the quantum‐confined Stark shift. We have observed a shift of 30 meV in the heavy hole exciton absorption peak over an electric field change of 50 kV/cm. This shift is double that observed for the same structure without the stepped wells.
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This notation corresponds to the 7 nm layer being grown first. The substrate is n doped.
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© 1993 American Institute of Physics.
1993
American Institute of Physics
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