The first fabrication of low cost n‐Sb2S3/p‐Si heterojunction solar cells by chemical deposition method is reported. It is observed that in the case of n‐Sb2S3 films chemically deposited with silicotungstic acid on p‐Si and annealed, the photovoltaic properties of the n‐Sb2S3/p‐Si junctions are considerably improved. Under AM1 illumination, the improved junction exhibited an efficiency (η) of ∼5.19% on an active area of 0.05 cm2 without any antireflection coating whereas the n‐Sb2S3 films deposited without STA on p‐Si showed η=1.03%.
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Research Article| July 12 1993
Low‐cost technique for preparing n‐Sb2S3/p‐Si heterojunction solar cells
O. Savadogo, K. C. Mandal; Low‐cost technique for preparing n‐Sb2S3/p‐Si heterojunction solar cells. Appl. Phys. Lett. 12 July 1993; 63 (2): 228–230. https://doi.org/10.1063/1.110349
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