The diffusion and n‐type doping of Si into GaAs from a novel diffusion source consisting of an undoped SiOx/SiN double‐layered film were achieved by rapid thermal annealing at 860–940 °C. The film properties of the double‐layered films employed as Si diffusion sources are experimentally presented. The characteristics of the Si diffused layers were investigated by secondary ion mass spectrometry, capacitance‐voltage measurement, and the Hall method. The carrier profiles exceeded 2×1018 cm−3 and featured an abrupt diffusion front, while a maximum electron concentration of 6×1018 cm−3 was obtained at 940 °C. The diffused Si profiles were consistent with the SiGa+VGa pair diffusion model.

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