The interband optical absorption edge of GaP1−xNx alloys grown by molecular beam epitaxy has been investigated by photoluminescence and photoluminescence excitation (PLE) spectroscopy. The results demonstrate the transition from nitrogen‐bound exciton luminescence indicative of isoelectronic traps in lightly doped films of GaP:N to the formation of indirect band gap alloys in the heavily N‐doped GaP films. A large red shift or reduction in band gap energy with increasing N concentration which is observed in PLE spectroscopy identifies the GaP1−xNx alloy system as one of the limited number of alloy systems whose intermediate compositions can have band gaps smaller than those of either of the constituent binary compounds.
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© 1993 American Institute of Physics.
1993
American Institute of Physics
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