We demonstrate the feasibility of a novel microgun‐pumped semiconductor laser. This is the most compact (a few cm3) and the lowest threshold electron‐beam‐pumped semiconductor laser ever reported. The electron source is provided by a 104–105/mm2 array of field emissive microtip cathodes each of 1.5 μm diam. The laser operates below 10 kV and below 1 A/cm2. Laser action in a quasi‐cw mode with 5 μs pulses at 2 kHz has been obtained between 90 and 300 K with CdTe‐CdMnTe graded index separate confinement quantum‐well heterostructures, as well as with GaAs‐GaAlAs structures. Since neither doping nor ohmic contacts are needed, the microgun laser can use all direct gap semiconductors. It appears as a viable solution for making compact II‐VI lasers in the visible domain.
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22 February 1993
Research Article|
February 22 1993
Microgun‐pumped semiconductor laser Available to Purchase
E. Molva;
E. Molva
LETI (CEA‐Technologies Avancées) Département Optronique, Centre d’Etudes Nucléaires de Grenoble, BP85X, 38041 Grenoble Cédex, France
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R. Accomo;
R. Accomo
LETI (CEA‐Technologies Avancées) Département Optronique, Centre d’Etudes Nucléaires de Grenoble, BP85X, 38041 Grenoble Cédex, France
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G. Labrunie;
G. Labrunie
LETI (CEA‐Technologies Avancées) Département Optronique, Centre d’Etudes Nucléaires de Grenoble, BP85X, 38041 Grenoble Cédex, France
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J. Cibert;
J. Cibert
CEA‐CNRS II‐VI Semiconductor Microstructure Group, Laboratoire de Spectrométrie Physique (CNRS URA 08), Université Joseph Fourier, BP87 38402 St. Martin d’Hères, France
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C. Bodin;
C. Bodin
CEA‐CNRS II‐VI Semiconductor Microstructure Group, Laboratoire de Spectrométrie Physique (CNRS URA 08), Université Joseph Fourier, BP87 38402 St. Martin d’Hères, France
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Le Si Dang;
Le Si Dang
CEA‐CNRS II‐VI Semiconductor Microstructure Group, Laboratoire de Spectrométrie Physique (CNRS URA 08), Université Joseph Fourier, BP87 38402 St. Martin d’Hères, France
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G. Feuillet
G. Feuillet
CEA‐CNRS II‐VI Semiconductor Microstructure Group, Laboratoire de Physique des Semiconducteurs, Département de Recherche Fondamentale sur la Matière Condensée, Centre d’Etudes Nucléaires de Grenoble, BP85X 38041 Grenoble Cédex, France
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E. Molva
LETI (CEA‐Technologies Avancées) Département Optronique, Centre d’Etudes Nucléaires de Grenoble, BP85X, 38041 Grenoble Cédex, France
R. Accomo
LETI (CEA‐Technologies Avancées) Département Optronique, Centre d’Etudes Nucléaires de Grenoble, BP85X, 38041 Grenoble Cédex, France
G. Labrunie
LETI (CEA‐Technologies Avancées) Département Optronique, Centre d’Etudes Nucléaires de Grenoble, BP85X, 38041 Grenoble Cédex, France
J. Cibert
CEA‐CNRS II‐VI Semiconductor Microstructure Group, Laboratoire de Spectrométrie Physique (CNRS URA 08), Université Joseph Fourier, BP87 38402 St. Martin d’Hères, France
C. Bodin
CEA‐CNRS II‐VI Semiconductor Microstructure Group, Laboratoire de Spectrométrie Physique (CNRS URA 08), Université Joseph Fourier, BP87 38402 St. Martin d’Hères, France
Le Si Dang
CEA‐CNRS II‐VI Semiconductor Microstructure Group, Laboratoire de Spectrométrie Physique (CNRS URA 08), Université Joseph Fourier, BP87 38402 St. Martin d’Hères, France
G. Feuillet
CEA‐CNRS II‐VI Semiconductor Microstructure Group, Laboratoire de Physique des Semiconducteurs, Département de Recherche Fondamentale sur la Matière Condensée, Centre d’Etudes Nucléaires de Grenoble, BP85X 38041 Grenoble Cédex, France
Appl. Phys. Lett. 62, 796–798 (1993)
Article history
Received:
July 28 1992
Accepted:
December 02 1992
Citation
E. Molva, R. Accomo, G. Labrunie, J. Cibert, C. Bodin, Le Si Dang, G. Feuillet; Microgun‐pumped semiconductor laser. Appl. Phys. Lett. 22 February 1993; 62 (8): 796–798. https://doi.org/10.1063/1.108581
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