We report the first direct measurement of near‐band‐gap Franz–Keldysh electrorefraction in Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As pin single‐crystal thin‐film Fabry–Perot structures with semitransparent metallic mirror contacts. These measurements are performed for various reverse biases and at photon energies ranging from 9 to less than 1 meV from the GaAs band edge. The measured refractive index variation is several times larger than that predicted by the effective mass approximation theory.

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