A new time‐dependent Hall effect analysis method is demonstrated on the DX center in AlGaAs:Si. Due to the time dependence of the carrier concentration and the mobility in the metastable temperature region of the DX center, errors are usually made in a standard estimation of the Hall effect values. By using an interpolation method for the individual measured voltages, we are able to omit these errors and also to explain them by a linear error approximation. We present mobility data and show that correlation effects between DX centers are important.

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© 1993 American Institute of Physics.
1993
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