Simultaneous occurrence of multiphases in the interfacial reactions of ultrahigh vacuum deposited Hf and Cr thin films on (111)Si

Simultaneous occurrence of multiphases were observed in the interfacial reactions of ultrahigh vacuum deposited Hf and Cr thin films on (111)Si by high‐resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For Hf/Si system, an amorphous interlayer, Hf₅Si₃ as well as FeB and CrB types of HfSi were found to form simultaneously in samples annealed at 530 °C for 40–80 min. For Cr/Si system, an amorphous interlayer, Cr₅Si₃, CrSi, and CrSi₂ were observed to form in samples annealed at 375 °C for 30 min. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of ultrahigh vacuum deposited refractory thin films. The results called for a reexamination of generally accepted ‘‘difference’’ in reaction sequence between bulk and thin‐film couples.