We introduce the pulsed Ruby laser as a new efficient degradation tool for amorphous hydrogenated silicon (a‐Si:H). We present the degradation dynamics and the saturated values of the density of states (DOS) and the room temperature conductivity. Comparison of two samples with different impurity content indicates the impurity‐related initial Fermi level shift. By a simple model we illustrate the influence of this shift on the initial stage of degradation (its acceleration or delay) and consequently, also on the saturated DOS.
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