Measurement of the gate capacitance‐voltage and conductance‐voltage characteristics of metal‐oxide‐semiconductor field‐effect transistors at 4.2 K has been used to search for Si/SiO2 interface traps above the silicon conduction band edge. A distinct feature emerges in the gate conductance curves after x‐ray irradiation providing strong evidence for the formation of conduction‐band interface traps. Trap densities and time constants have been extracted using a distributed circuit model. The trap energy level lies about 20 meV above the bottom of the conduction band.
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© 1992 American Institute of Physics.
1992
American Institute of Physics
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