High‐quality YBa2Cu3O7−δ films grown on (001) single‐crystal Y‐ZrO2 substrates by pulsed laser deposition have been studied as a function of substrate temperature using transmission electron microscopy. A transition from epitaxial films to c‐axis oriented polycrystalline films was observed at 740 °C. An intermediate, polycrystalline, BaZrO3 layer was formed from a reaction between the film and the substrate. A dominant orientation relationship of [001]YBCO//[001]int. layer//[001]YSZ and [110]YBCO//[110]int. layer//[100]YSZ was observed. The formation of grain boundaries in the films resulted in an increased microwave surface resistance and a decreased critical‐current density. The superconducting transition temperature remained fairly constant at about 90 K.
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10 August 1992
Research Article|
August 10 1992
Effects of substrate temperature on the microstructure of YBa2Cu3O7−δ films grown on (001) Y‐ZrO2 substrates
J. A. Alarco;
J. A. Alarco
Department of Physics, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
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G. Brorsson;
G. Brorsson
Department of Physics, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
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Z. G. Ivanov;
Z. G. Ivanov
Department of Physics, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
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P.‐Å. Nilsson;
P.‐Å. Nilsson
Department of Physics, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
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E. Olsson;
E. Olsson
Department of Physics, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
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M. Löfgren
M. Löfgren
Department of Applied Electron Physics, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
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J. A. Alarco
G. Brorsson
Z. G. Ivanov
P.‐Å. Nilsson
E. Olsson
M. Löfgren
Department of Physics, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
Appl. Phys. Lett. 61, 723–725 (1992)
Article history
Received:
February 17 1992
Accepted:
June 11 1992
Citation
J. A. Alarco, G. Brorsson, Z. G. Ivanov, P.‐Å. Nilsson, E. Olsson, M. Löfgren; Effects of substrate temperature on the microstructure of YBa2Cu3O7−δ films grown on (001) Y‐ZrO2 substrates. Appl. Phys. Lett. 10 August 1992; 61 (6): 723–725. https://doi.org/10.1063/1.107779
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