A new electron trap at Ec‐0.06 eV is detected in n‐type silicon irradiated with 200 keV electrons at room temperature using deep‐level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon‐interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.

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