The substantial expansion of the temperature range for atomic layer epitaxy (ALE) was reported using triethyl‐gallium by K. Fujii, I. Suemune, T. Koui, and M. Yamanishi [Appl. Phys. Lett. 60, 1498 (1992)]. This was observed by replacing arsine with an amino‐As, tris‐dimethylamino‐arsenic {As[N(CH3)2]3}. The self‐limiting mechanism was attributed to the adsorption of amine species on the Ga as well as As surfaces. The time constants and the activation energies for the desorption of the amine species were measured using transient quadrupole mass spectrometry. It is shown that the adsorption properties of the amine species on the Ga surfaces are intermediate between those of methyl and ethyl species.
REFERENCES
1.
M.
Ozeki
, K.
Mochizuki
, N.
Ohtsuka
, and K.
Kodama
, Appl. Phys. Lett.
53
, 1509
(1988
).2.
M. L.
Yu
, U.
Memmert
, and T. F.
Kuech
, Appl. Phys. Lett.
55
, 1011
(1989
).3.
H.
Ohno
, S.
Ohtsuka
, H.
Ishii
, Y.
Matsubara
, and H.
Hasegawa
, Appl. Phys. Lett.
54
, 2000
(1989
).4.
5.
S. P.
Denbaars
, P. D.
Dapkus
, C. A.
Beyler
, A.
Hariz
, and K. M.
Dzurko
, J. Cryst. Growth
93
, 195
(1988
).6.
A.
Watanabe
, T.
Isu
, M.
Hata
, T.
Kamijoh
, and Y.
Katayama
, Jpn. J. Appl. Phys.
28
, L1080
(1989
).7.
T. H.
Chiu
, J. E.
Cunningham
, A.
Robertson
, and D. L.
Malm
, J. Cryst. Growth
105
, 155
(1990
).8.
9.
K.
Fujii
, I.
Suemune
, T.
Koui
, and M.
Yamanishi:
Appl. Phys. Lett.
60
, 1498
(1992
).10.
J.
Nishizawa
, T.
Kurabayashi
, H.
Abe
, and N.
Sakurai
, J. Vac. Sci. Technol. A
5
, 1572
(1987
).11.
K.
Hamaoka
, I.
Suemune
, K.
Fujii
, T.
Koui
, A.
Kishimoto
, and M.
Yamanishi
, Jpn. J. Appl. Phys.
30
, L1579
(1991
).
This content is only available via PDF.
© 1992 American Institute of Physics.
1992
American Institute of Physics
You do not currently have access to this content.
