This letter describes Si band‐gap shrinkage caused by local strain at the local oxidation of silicon (LOCOS) edge. The local band‐gap shrinkage of 20–30 meV is shown to exist at the LOCOS edge by measuring the forward‐biased junction current of square n+ regions on a p substrate for various junction sizes. The junction current is observed to be proportional to the peripheral length rather than the area of the square n+ regions at liquid‐nitrogen temperatures. It is also likely that the shrinkage would degrade the current gain of bipolar transistors, especially at low temperatures.  

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