Novel hydrogen‐gold‐related deep acceptor in n‐type silicon

Using deep level transient spectroscopy (DLTS) on gold‐doped n‐type Czochralski (CZ) and float zone (FZ) silicon we observe a new gold‐related acceptor level (G) with an activation energy ΔE=0.19 eV and an electron capture cross section σ_n=1×10⁻¹⁷ cm². The center is formed after hydrogenation by etching a few microns off the sample surface using HF:HNO₃ based etch. We suggest that there are (at least) two possible Au‐H complex centers, one which is electrically inactive and another which gives rise to an acceptor level (ΔE=0.19 eV) in the band gap of n‐type silicon. The electrically active center anneals out at 250 °C while the electrically inactive one is more stable and has been observed earlier in remote plasma hydrogenation experiments performed at 150–350 °C.