We report the results of modeling lateral p‐n junctions and p‐n‐p quantum wire structures at corrugated GaAs/AlGaAs interfaces, using the surface orientation dependent amphoteric nature of Si doping. We determine the potential landscape and the electron and hole charge densities within a semiclassical Thomas–Fermi screening model, and then solve the two‐dimensional Schrödinger equation using finite elements for the quantized electron and hole states at the heterointerfaces. We demonstrate the formation of a one‐dimensional electron system confined between two lateral p‐n junctions, and discuss the advantages of this structure compared to conventional electrostatic confinement schemes for fabricating quantum wires.
Lateral p‐n junctions and quantum wires formed by quasi two‐dimensional electron and hole systems at corrugated GaAs/AlGaAs interfaces
Wolfgang Porod, Henry K. Harbury, Stephen M. Goodnick; Lateral p‐n junctions and quantum wires formed by quasi two‐dimensional electron and hole systems at corrugated GaAs/AlGaAs interfaces. Appl. Phys. Lett. 12 October 1992; 61 (15): 1823–1825. https://doi.org/10.1063/1.108386
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