Excimer laser mixing of Ti layers on Si₃N₄ ceramic substrates

We have used pulsed excimer laser radiation at 248 nm to mix Ti layers into Si₃N₄ substrates. Mixed layers show formation of small grain TiN in a Si₃N₄ but no evidence of Ti‐Si compounds or free Si. Low fluence (∼1.0 J cm⁻²) processing results in minimal mixing as TiN formation at the interface impedes further diffusion. At higher fluence (≳2 J cm⁻²) complete and quite uniform mixing occurs. The mixed layer is of the order of 0.5 μm thick.