We have used pulsed excimer laser radiation at 248 nm to mix Ti layers into Si3N4 substrates. Mixed layers show formation of small grain TiN in a Si3N4 but no evidence of Ti‐Si compounds or free Si. Low fluence (∼1.0 J cm−2) processing results in minimal mixing as TiN formation at the interface impedes further diffusion. At higher fluence (≳2 J cm−2) complete and quite uniform mixing occurs. The mixed layer is of the order of 0.5 μm thick.

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