We have used pulsed excimer laser radiation at 248 nm to mix Ti layers into Si3N4 substrates. Mixed layers show formation of small grain TiN in a Si3N4 but no evidence of Ti‐Si compounds or free Si. Low fluence (∼1.0 J cm−2) processing results in minimal mixing as TiN formation at the interface impedes further diffusion. At higher fluence (≳2 J cm−2) complete and quite uniform mixing occurs. The mixed layer is of the order of 0.5 μm thick.
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Research Article| February 17 1992
Excimer laser mixing of Ti layers on Si3N4 ceramic substrates
T. R. Jervis;
T. R. Jervis, M. Nastasi, K. M. Hubbard; Excimer laser mixing of Ti layers on Si3N4 ceramic substrates. Appl. Phys. Lett. 17 February 1992; 60 (7): 912–914. https://doi.org/10.1063/1.107436
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