Epitaxial layers of MgO grown on (NH4)xS‐treated (100)GaAs substrates were prepared by electron‐beam evaporation in an ultrahigh vacuum system without introducing additional oxygen. The films deposited at 500 °C were found to grow with stoichiometric composition and have (110) planar orientation. X‐ray pole‐figure analysis showed that the [11̄0] direction in the MgO(110) plane is parallel to the [011̄] direction in the GaAs(100) plane with a 4: 3 coincident site lattice. The film surface was smooth with no signs of structural defects or microcracks.

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