The dependence of photocurrent properties on incident optical power in a quantum well p‐i‐n photodiode with a nonohmic contact was investigated. The experimental results showed that a significant absorption peak shift, in an extremely low optical power range, as well as a notable modification in the spectral shape at a higher power range was observed, without any external feedback element. The mechanism for the optical nonlinear responses can be explained in terms of the built‐in field screening at the p‐i‐n junction or by taking into account the load characteristics of the Schottky‐like contact.
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© 1992 American Institute of Physics.
1992
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