Magnetoquantum oscillations in the tunnel current of a p‐type double‐barrier AlAs/GaAs/AlAs device are used to measure the buildup of hole space charge in the quantum well over a wide range of bias. These measurements demonstrate sequential tunneling of holes. The effective mass for hole tunneling is estimated.
REFERENCES
1.
L. L.
Chang
, L.
Esaki
, and R. L.
Tsu
, Appl. Phys. Lett.
24
, 593
(1974
).2.
3.
V. J.
Goldman
, D. C.
Tsui
, and J. E.
Cunningham
, Phys. Rev. B
35
, 9387
(1987
).4.
5.
V. J.
Goldman
, D. C.
Tsui
, and J. E.
Cunningham
, Phys. Rev. Lett.
58
, 1256
(1987
);A.
Zaslavsky
, V. J.
Goldman
, D. C.
Tsui
, and J. E.
Cunningham
, Appl. Phys. Lett.
53
, 1408
(1988
).6.
M. L.
Leadbeater
, E. S.
Alves
, F. W.
Sheard
, L.
Eaves
, M.
Henini
, O. H.
Hughes
, and G. A.
Toombs
, J. Phys. Condens. Matter
1
, 10
605
(1989
).7.
8.
W. I.
Wang
, E. E.
Mendez
, B.
Ricco
, and L.
Esaki
, J. Vac. Sci. Technol. B
3
, 1149
(1985
);E. E.
Mendez
, W. I.
Wang
, B.
Ricco
, and L.
Esaki
, Appl. Phys. Lett.
47
, 415
(1985
).9.
E. E.
Mendez
, L.
Esaki
, and W. I.
Wang
, Phys. Rev. B
33
, 2893
(1986
).10.
11.
12.
13.
14.
The higher energy states of the quantum well are at energies comparable with the spin-orbit splitting in GaAs, It is therefore necessary to consider the split-off band in any calculations of the energies of states in the quantum well.
15.
G. Landwehr, in Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures, edited by J. M. Chamberlain, L. Eaves, and J. C. Portal (Plenum, New York, 1990), p. 33.
16.
Explicitly, assuming that the charge is distributed uniformly across the width of the quantum well, where is the ionized acceptor density in the screening region and is the relative permittivity of GaAs. The average stand-off distance λ of the accumulation layer charge from the emitter barrier can be estimated from the Fang-Howard wave Function (see Ref. 11). for “.
17.
R. K. Hayden, L. Eaves, and E. C. Valadares (unpublished).
18.
19.
R. W.
Kelsall
, A. C. G.
Wood
, and R. A.
Abram
, Semicond. Sci. Technol.
6
, 841
(1991
).20.
21.
Landolt-Börnstein Numerical Data and Functional Relationships in Science and Technology, edited by V. Madelung (Springer, Berlin, 1982).
22.
E. T.
Yu
, M. K.
Jackson
, and T. C.
McGill
, Appl. Phys. Lett.
55
, 744
(1989
).
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1992
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