Nearly degenerate four‐wave mixing (NDFWM) and asymmetric gain saturation were studied in a 1.5 μm InGaAsP semiconductor laser amplifier at highly saturated conditions (Pout ≫ Psat) and frequency separations up to 500 GHz. Apart from modulation of the carrier density the data reveal a new mechanism of NDFWM with a characteristic time of about 650 fs which takes over when the frequency separation exceeds 100 GHz.
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© 1991 American Institute of Physics.
1991
American Institute of Physics
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