A simple current‐voltage measurement technique using microbridge patterns is described as a fast method for the determination of the effective peak electron velocity in III‐V semiconducting materials. The method is tested for GaAs samples. Microbridge patterns with different geometries were investigated and the influence of ‘‘self‐heating’’ by power dissipation was examined. Some other potential sources of errors deteriorating the accuracy of measurements were determined.

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© 1991 American Institute of Physics.
1991
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