Impurity doping into a GaInP/AlGaInP multiquantum well (MQW) active layer is applied to suppress the occurrence of the ordered structure of column III elements. Calculation of the quantized energy level in an ordered and disordered GaInP quantum well (QW) shows that uniform p‐type impurity doping into a MQW structure is more effective than modulation doping for shortening the lasing wavelength. The lasing wavelength of p‐doped MQW lasers with a 3‐nm‐thick GaInP QW can be shortened to 633.2 nm at an output power of 2 mW at 20 °C. A maximum lasing temperature of 46 °C for a 630 nm band AlGaInP MQW laser with a cavity length of 450 μm is obtained.
REFERENCES
1.
M.
Ishikawa
, H.
Shiozawa
, Y.
Tsuburai
, and Y.
Uematsu
, Electron. Lett.
26
, 211
(1990
).2.
K.
Itaya
, M.
Ishikawa
, and Y.
Uematsu
, Electron. Lett.
26
, 839
(1990
).3.
K.
Kobayashi
, Y.
Ueno
, H.
Hotta
, A.
Gomyo
, K.
Tada
, K.
Hara
, and T.
Yuasa
, Jpn. J. Appl. Phys.
29
, L1669
(1990
).4.
S.
Kawata
, K.
Kobayashi
, H.
Fujii
, I.
Hino
, A.
Gomyo
, H.
Hotta
, and T.
Suzuki
, Electron. Lett.
24
, 1489
(1988
).5.
J. M.
Dallesasse
, D. W.
Nam
, D. G.
Deppe
, N.
Holonyak
, Jr., R. M.
Hetcher
, C. P.
Kuo
, T. D.
Osentowski
, and M. G.
Craford
, Appl. Phys. Lett.
53
, 1826
(1988
).6.
A. Valster, C. T. H. F. Liedenbaum, J. M. M. v. d. Heijden, M. N. Finke, A. L. G. Severens, and M. J. B. Boermans, Twelfth IEEE International Semiconductor Laser Conference, Davos, Swizerland, The IEEE Lasers and Electro-optics Society, New Jersey, C-l, 28 (1990).
7.
8.
T.
Tanaka
, S.
Minagawa
, T.
Kawano
, and T.
Kajimura
, Electron. Lett.
25
, 905
(1989
).9.
S.
Minagawa
, T.
Tanaka
, and M.
Kondow
, Electron. Lett.
25
, 925
(1989
).10.
T.
Suzuki
, A.
Gomyo
, I.
Hino
, K.
Kobayashi
, S.
Kawata
, and S.
Iijima
, Jpn. J. Appl. Phys.
27
, L1549
(1988
).11.
Y.
Nishikawa
, M.
Ishikawa
, Y.
Tsuburai
, and Y.
Kokubun
, Jpn. J. Appl. Phys.
28
, L2092
(1988
).12.
T.
Tanaka
, S.
Minagawa
, and T.
Kajimura
, Appl. Phys. Lett.
54
, 1391
(1989
).13.
C. T. H. F.
Liedenbaum
, A.
Valster
, A. L. G. J.
Severens
, and G. W. ’t
Hooft
, Appl. Phys. Lett.
57
, 2698
(1990
).14.
T. Tanaka, A. Ooishi, T. Kajimura, and S. Minagawa, Extended Abstracts of the 22nd International Conference on Solid State Devices and Materials, Sendai, Japan, The Japan Society of Applied Physics, Tokyo, LN-D-14, 1990, p. 1177.
15.
T.
Takagi
, F.
Koyama
, and K.
Iga
, Jpn. J. Appl. Phys.
29
, L1977
(1990
).
This content is only available via PDF.
© 1991 American Institute of Physics.
1991
American Institute of Physics
You do not currently have access to this content.