A residue which is characteristic of internal scattering is extracted from the below threshold spectra of 1.3 μm semiconductor diode lasers by fitting a smooth function to the measured gain profile. The residue is found to be correlated with the above threshold spectral output. This suggests that the amount of scattering in the active region is an important quantity in determining the spectral output of semiconductor diode lasers.

1.
H.
Naito
,
H.
Nagai
,
M.
Yuri
,
K.
Tateoka
,
M.
Kume
,
K.
Hamada
, and
H.
Shimizu
,
J. Appl. Phys.
66
,
5726
(
1989
).
2.
F. H.
Peters
and
D. T.
Cassidy
,
Appl. Phys. Lett.
57
,
330
(
1990
).
3.
F. H.
Peters
and
D. T.
Cassidy
,
J. Opt. Soc. Am. B
8
,
99
(
1991
).
4.
L. F.
DeChiaro
,
J. Light. Tech.
8
,
1659
(
1990
).
5.
M.
Yamada
and
Y.
Suematsu
,
Jpn. J. Appl. Phys.
18
, Suppl.
18-1
,
347
(
1979
).
6.
K.
Petermann
,
IEEE J. Quantum Electron.
15
,
566
(
1979
).
7.
R. F.
Kazarinov
,
C. H.
Henry
, and
R. A.
Logan
,
J. Appl. Phys.
53
,
4631
(
1982
).
8.
G. P. Agrawal and N. K. Dutta, Long Wavelength Semiconductor Lasers, (Van Nostrand Reinhold, New York, 1986), p. 226.
9.
D. T.
Cassidy
,
J. Appl. Phys.
56
,
3096
(
1984
).
10.
D. T.
Cassidy
,
IEEE J. Quantum Electron.
20
,
913
(
1984
).
11.
H.
Ishikawa
,
H.
Imai
,
T.
Tanahashi
,
K.-I.
Hori
, and
K.
Takahei
,
IEEE J. Quantum Electron.
18
,
1704
(
1982
).
12.
I.
Mito
,
M.
Kitamura
,
K.
Kobayashi
,
S.
Murata
,
M.
Seki
,
Y.
Odagiri
,
H.
Nishimoto
,
M.
Yamaguchi
, and
K.
Kobayashi
,
J. Lightwave Technol.
1
,
195
(
1983
).
13.
J. C.
Dyment
,
Appl. Phys. Lett.
10
,
84
(
1967
).
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