Narrow channel devices were fabricated using a split‐gate high electron mobility transistor structure in which electrons are forced through a double‐bend discontinuity. The low‐temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.
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Research Article| July 01 1991
Interference phenomena due to a double bend in a quantum wire
J. C. Wu;
M. N. Wybourne;
J. C. Wu, M. N. Wybourne, W. Yindeepol, A. Weisshaar, S. M. Goodnick; Interference phenomena due to a double bend in a quantum wire. Appl. Phys. Lett. 1 July 1991; 59 (1): 102–104. https://doi.org/10.1063/1.105558
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