We demonstrate that in situ Si cleaning techniques prior to low‐temperature GaAs buffer layer growth affect the morphology of the GaAs buffer layer in the early stages of growth and the crystal quality of 3‐μm‐thick GaAs grown epitaxially afterward on the buffer layer at 650 °C. Both thermal cleaning and hydrogen/arsine plasma cleaning at 650 °C result in a bimodal distribution of GaAs nuclei on Si, although the number of larger nuclei with {111} facets decreases with the plasma cleaning. No such larger islands are observed with hydrogen/arsine plasma cleaning at 450 °C, and this makes possible a two‐dimensional‐like nucleation of the buffer layer. This two‐dimensional‐like nucleation of the buffer layer, in contrast to the bimodal nucleation behavior observed in other cleaning conditions, leads to a significant improvement in GaAs crystal quality with a reduction of full width at half maximum from 755 to 306 arcsec as measured by double‐crystal diffractometry.
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25 February 1991
Research Article|
February 25 1991
Improvement of GaAs crystal quality grown on Si by metalorganic chemical vapor deposition through two‐dimensional‐like nucleation with an in situ H2/AsH3 plasma cleaning at 450 °C
Euijoon Yoon;
Euijoon Yoon
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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Rafael Reif
Rafael Reif
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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Appl. Phys. Lett. 58, 862–864 (1991)
Article history
Received:
May 29 1990
Accepted:
December 21 1990
Citation
Euijoon Yoon, Rafael Reif; Improvement of GaAs crystal quality grown on Si by metalorganic chemical vapor deposition through two‐dimensional‐like nucleation with an in situ H2/AsH3 plasma cleaning at 450 °C. Appl. Phys. Lett. 25 February 1991; 58 (8): 862–864. https://doi.org/10.1063/1.104514
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