The oxidation rate of silicon small particles prepared by a gas‐evaporation method and with diameters ranging from about 20 to 500 nm is investigated by high‐resolution transmission electron microscopy. It is found that the oxidation rate of silicon small particles is less than the rate for wafers, and decreases with decreasing particle size. This phenomenon cannot be explained by the Deal–Grove model.

1.
S.
Ohno
 and
M.
Uda
,
J. Jpn. Inst. Metals
53
,
1062
(
1989
).
Google Scholar
Crossref
Search ADS
 
2.
R. B.
Marcus
 and
T. T.
Sheng
,
J. Electrochem. Soc.
129
,
1278
(
1982
).
Google Scholar
Crossref
Search ADS
 
3.
A.
Matsunawa
,
S.
Katayama
, and
Y.
Arata
,
J. High Temp. Soc.
13
,
69
(
1987
).
Google Scholar
 
4.
S.
Iijima
,
Jpn. J. Appl. Phys.
26
,
357
(
1987
).
Google Scholar
Crossref
Search ADS
 
5.
B. E.
Deal
 and
A. S.
Grove
,
J. Appl. Phys.
36
,
3770
(
1965
).
Google Scholar
Crossref
Search ADS
 
6.
Kao
,
IEEE
DE-35
25
,
25
(
1988
).
Google Scholar
 
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© 1991 American Institute of Physics.
1991
American Institute of Physics
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