Monolayer atomic layer epitaxy of GaAs has been achieved between 430 and 500 °C by using alternating pulses of AsH3, Ga(CH3)3, and atomic hydrogen. Maintaining the susceptor temperature below 500 °C suppresses the unfavorable thermal decomposition of Ga(CH3)3 to Ga in the gas phase. The basic point of our growth method is that, notwithstanding these low temperatures, sufficiently fast surface kinetics for growth are maintained by activation with the atomic hydrogen pulses.
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1991
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