The behavior of Si/CH3OH‐dimethylferrocene+/0 junctions has been investigated under high injection conditions. Open circuit voltages of (626±5) mV were obtained at short circuit photocurrent densities of 20 mA/cm2 for samples with an n+‐diffused back region, point contacts on the back surface, and with a base of thickness 390 μm and a 1 ms hole lifetime. The diode quality factor and recombination current density were 1.8±0.1 and (2.6±1.5)×10−8 A/cm2, respectively. These data are consistent with recombination dominated by the base and back contact regions, and not at the Si/CH3OH interface.

1.
M. L.
Rosenbluth
,
C. M.
Lieber
, and
N. S.
Lewis
,
Appl. Phys. Lett.
45
,
423
(
1984
).
2.
N. S.
Lewis
,
Ann. Rev. Mater. Sci.
14
,
95
(
1984
).
3.
M. L.
Rosenbluth
and
N. S.
Lewis
,
J. Am. Chem. Soc.
198
,
4689
(
1986
).
4.
W.
Shockley
,
Bell Syst. Tech. J.
28
,
435
(
1949
);
A. L. Fahrenbruch and R. H. Bube, Fundamentals of Solar Cells (Academic, New York, 1983).
5.
R. M.
Swanson
,
Solar Cells
17
,
85
(
1986
);
R. A.
Sinton
and
R. M.
Swanson
,
IEEE Trans. Electron. Devices
ED‐34
,
2116
(
1987
).
6.
R. R.
King
,
R. A.
Sinton
, and
R. M.
Swanson
,
Appl. Phys. Lett.
54
,
1460
(
1989
).
7.
C. M.
Gronet
,
N. S.
Lewis
,
G. W.
Cogan
, and
J. F.
Gibbons
,
Proc. Nat. Acad. Sci. USA
88
,
1152
(
1983
).
8.
K. D.
Legg
,
A. B.
Ellis
,
J. M.
Bolts
, and
M. S.
Wrighton
,
Proc. Natl. Acad. Sci. USA
74
,
4116
(
1977
).
9.
J. F.
Gibbons
,
G. W.
Cogan
,
C. M.
Gronet
, and
N. S.
Lewis
,
Appl. Phys. Lett.
45
,
1095
(
1984
).
10.
J. A.
Bruce
and
M. S.
Wrighton
,
J. Electroanal. Chem.
122
,
93
(
1981
).
11.
H. Gerischer, in Physical Chemistry, An Advanced Treatise, edited by H. Y. Eyring, D. Henderson, and W. Yost, 9A, pp. 463–542, 1970.
12.
S. R. Morrison, Electrochemistry at Semiconductor and Oxidized Metal Electrodes (Plenum, New York, 1981).
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