We have demonstrated the localized formation of a two‐dimensional electron gas (2DEG) using focused Si ion beam implantation (100 keV) into undoped GaAs/AlGaAs heterostructures. We found that to achieve a good‐quality 2DEG without also forming a 3DEG it is essential to use a double instead of a single interface heterostructure. The low‐temperature mobility of the 2DEG was as high as 1.0×104 cm2/V s at a carrier concentration of 1×1012 cm−2. This 2DEG mobility in the double heterostructure was a factor of 3 larger than the 2DEG mobility in the single heterostructures.

1.
Y.
Hirayama
,
Y.
Suzuki
, and
K.
Okamoto
,
Jpn. J. Appl. Phys.
24
,
1498
(
1985
).
2.
T.
Hiramoto
,
K.
Hirakawa
,
Y.
Iye
, and
T.
Ikoma
,
Appl. Phys. Lett.
51
,
1620
(
1987
).
3.
J.
Cibert
,
P. M.
Petroff
,
G. J.
Dolan
,
S. J.
Pearton
,
A. C.
Gossard
, and
J. H.
English
,
Appl. Phys. Lett.
49
,
1275
(
1986
).
4.
F.
Laruelle
,
P.
Hu
,
R.
Simes
,
R.
Kubena
,
W.
Robinson
,
J.
Merz
, and
P. M.
Petroff
,
J. Vac. Sci. Technol. B
6
,
2034
(
1989
).
5.
K.
Ensslin
and
P. M.
Petroff
,
Phys. Rev. B
41
,
12307
(
1990
).
6.
Y. Li, S. Sasa, Z. Xu, and P. M. Petroff, Proc. SPIE (to be published).
7.
A.
Kawano
,
H.
Arimoto
,
H.
Kitada
,
S.
Sasa
,
E.
Miyauchi
, and
T.
Fujii
,
Inst. Phys. Conf. Ser.
106
,
533
(
1989
).
8.
Hiyamizu
,
T.
Mimura
,
T.
Fujii
,
K.
Nanbu
, and
H.
Hashimoto
,
Jpn. J. Appl. Phys.
20
,
L245
(
1981
).
9.
S.
Sasa
,
J.
Saito
,
K.
Nanbu
,
T.
Ishikawa
,
S.
Hiyamizu
, and
M.
Inoue
,
Jpn. J. Appl. Phys.
24
,
L281
(
1985
).
10.
R.
Anholt
,
P.
Balasingam
,
S. Y.
Chou
,
T. W.
Sigmon
, and
M.
Deal
,
J. Appl. Phys.
64
,
3429
(
1988
).
11.
F.
Laruelle
,
A.
Bagchi
,
M.
Tsuchiya
,
J.
Merz
, and
P. M.
Petroff
,
Appl. Phys. Lett.
56
,
1561
(
1990
).
12.
D. L. Rode, Semiconductors and Semimetals (Academic, New York, 1959), Vol. 10, p. 1.
13.
R. L.
Petritz
,
Phys. Rev.
110
,
1254
(
1958
).
14.
T.
Ishikawa
,
J.
Saito
,
S.
Sasa
, and
S.
Hiyamizu
,
Jpn. J. Appl. Phys.
21
,
L675
(
1982
).
This content is only available via PDF.
You do not currently have access to this content.