The band gap of Ga0.5In0.5P is reported as a function of growth rate and growth temperature. The Ga0.5In0.5P is grown lattice matched to 2°‐off (100) GaAs substrates by atmospheric pressure organometallic chemical vapor deposition using an inlet group V/III ratio of 65. The variation of the band gap is surprisingly complex, taking five different functional forms within the two‐dimensional parameter space. These include regions in which the band gap (1) increases with growth rate, (2) decreases with growth rate, (3) is independent of both growth rate and temperature, (4) is independent of growth rate, but dependent on growth temperature, and (5) is not measurable since three‐dimensional, instead of two‐dimensional, growth is observed. The behavior can only be explained by a theory involving competing processes. One such theory is described.
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29 October 1990
Research Article|
October 29 1990
Effect of growth rate on the band gap of Ga0.5In0.5P
Sarah R. Kurtz;
Sarah R. Kurtz
Solar Energy Research Institute, Golden, Colorado 80401
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J. M. Olson;
J. M. Olson
Solar Energy Research Institute, Golden, Colorado 80401
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A. Kibbler
A. Kibbler
Solar Energy Research Institute, Golden, Colorado 80401
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Sarah R. Kurtz
J. M. Olson
A. Kibbler
Solar Energy Research Institute, Golden, Colorado 80401
Appl. Phys. Lett. 57, 1922–1924 (1990)
Article history
Received:
March 14 1990
Accepted:
August 10 1990
Citation
Sarah R. Kurtz, J. M. Olson, A. Kibbler; Effect of growth rate on the band gap of Ga0.5In0.5P. Appl. Phys. Lett. 29 October 1990; 57 (18): 1922–1924. https://doi.org/10.1063/1.104013
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