A novel structure superlattice avalanche photodiode is proposed. A p‐InGaAs photoabsorption layer is separated from a nondoped InGaAs/InAlAs superlattice avalanche multiplication region. The electric field strength at the photoabsorption layer is controlled by a thin, highly doped p‐InGaAs layer, which is sandwiched between the multiplication and photoabsorption layers. Devices with this structure were fabricated by molecular beam epitaxy. The external quantum efficiency is 73% at the multiplication factor of unity. The multiplication noise is quite small corresponding to an effective ionization rate ratio of 0.1. The maximum 3 dB bandwidth is 9.3 GHz.
REFERENCES
1.
F.
Capasso
, W. T.
Tsang
, A. L.
Hutchinson
, and G. F.
Williams
, Appl. Phys. Lett.
40
, 38
(1980
).2.
F.‐Y.
Juang
, U.
Das
, Y.
Nashimoto
, and A. Y.
Cho
, Appl. Phys. Lett.
47
, 972
(1985
).3.
T.
Kagawa
, H.
Iwamura
, and O.
Mikami
, Appl. Phys. Lett.
54
, 33
(1989
).4.
T.
Kagawa
, Y.
Kawamura
, H.
Asai
, M.
Naganuma
, and O.
Mikami
, Appl. Phys. Lett.
55
, 993
(1989
).5.
R.
People
, K. W.
Wecht
, K.
Alavi
, and A. Y.
Cho
, Appl. Phys. Lett.
43
, 118
(1983
).6.
K.
Mohammed
, F.
Capasso
, J.
Allam
, A. Y.
Cho
, and A. L.
Hutchinson
, Appl. Phys. Lett.
17
, 597
(1985
).7.
A. J.
Moseley
, J.
Urquhart
, and J. R.
Riffat
, Electron. Lett.
24
, 313
(1988
).8.
O. K.
Kim
, S. R.
Forrest
, W. A.
Bonner
, and R. G.
Smith
, Appl. Phys. Lett.
39
, 402
(1981
).9.
L. W. Cook, N. Tabatabaie, M. M. Tashima, T. W. Windhorn, G. E. Bulman, and G. E. Stillman, in Proceedings of the 8th International Symposium on GaAs and Related Compounds, edited by H. W. Thim (Institute of Physics, Bristol, 1980), p. 361.
10.
11.
12.
Y.
Miyamoto
, K.
Hagimoto
, and T.
Kagawa
, Electron. Lett.
26
, 491
(1990
).13.
14.
S. R.
Forrest
, G. F.
Williams
, O. K.
Kim
, and R. G.
Smith
, Electron. Lett.
17
, 917
(1981
).15.
J. C.
Campbell
, W. T.
Tsang
, G. J.
Qua
, and J. E.
Bowers
, Appl. Phys. Lett.
51
, 1454
(1987
).16.
W. S.
Holden
, J. C.
Campbell
, J. F.
Ferguson
, A. G.
Dentai
, and Y. K.
Jhee
, Electron. Lett.
21
, 887
(1985
).17.
This content is only available via PDF.
© 1990 American Institute of Physics.
1990
American Institute of Physics
You do not currently have access to this content.
