Epitaxial growth of InSb on GaAs by metalorganic chemical vapor deposition {au}R. M. ,Biefeld and

InSb epitaxial layers have been grown on GaAs substrates by metalorganic chemical vapor deposition using trimethylindium and triethyl‐ or trimethylantimony as sources of In and Sb. Transmission electron microscopy revealed the existence of a large number of misfit dislocations at the substrate‐epitaxial layer interface and, in some samples, misoriented grains. The quality of the layers improved with thickness as indicated by transmission electron microscopy, x‐ray rocking curve widths, and Hall mobilities. The mobility was correlated with surface roughness, x‐ray rocking curve width, and the Sb/In ratio. Hall mobilities up to 60 900 and 27 000 cm²/V s were obtained at 300 and 77 K, respectively, on a 2.9‐μm‐thick epitaxial InSb layer grown using a two‐step growth procedure.