InSb epitaxial layers have been grown on GaAs substrates by metalorganic chemical vapor deposition using trimethylindium and triethyl‐ or trimethylantimony as sources of In and Sb. Transmission electron microscopy revealed the existence of a large number of misfit dislocations at the substrate‐epitaxial layer interface and, in some samples, misoriented grains. The quality of the layers improved with thickness as indicated by transmission electron microscopy, x‐ray rocking curve widths, and Hall mobilities. The mobility was correlated with surface roughness, x‐ray rocking curve width, and the Sb/In ratio. Hall mobilities up to 60 900 and 27 000 cm2/V s were obtained at 300 and 77 K, respectively, on a 2.9‐μm‐thick epitaxial InSb layer grown using a two‐step growth procedure.
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8 October 1990
Research Article|
October 08 1990
Epitaxial growth of InSb on GaAs by metalorganic chemical vapor deposition {au}R. M. ,Biefeld and
G. A. Hebner
G. A. Hebner
Sandia National Laboratories, Albuquerque, New Mexico 87185
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G. A. Hebner
Sandia National Laboratories, Albuquerque, New Mexico 87185
Appl. Phys. Lett. 57, 1563–1565 (1990)
Article history
Received:
May 03 1990
Accepted:
July 16 1990
Citation
G. A. Hebner; Epitaxial growth of InSb on GaAs by metalorganic chemical vapor deposition {au}R. M. ,Biefeld and. Appl. Phys. Lett. 8 October 1990; 57 (15): 1563–1565. https://doi.org/10.1063/1.103354
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