GaAs surface modification caused by rf plasma hydrogenation has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. While the Schottky barrier height on n‐GaAs is found to reduce slightly, exceptionally high barriers have been seen for p‐GaAs. The effective barrier height of Au/p‐GaAs diodes increases from 0.35 eV for unhydrogenated control to 0.84 eV with plasma hydrogenation.
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