A distinctive Raman spectrum associated with biatomic sheets of silicon in Si/Ge superlattices has been found in the energy range 370–410 cm−1. This double‐peaked structure was obtained over an order of magnitude of germanium layer thickness, but was not found in the alloy control layers or structures with thicker Si layers. It is proposed that the signal is due to modes that are normally forbidden in this scattering configuration. Strong direct optical transitions have been predicted for certain Si/Ge superlattices incorporating biatomic sheets of Si and this distinctive Raman signal could be used to characterize the biatomic sheets of silicon in these structures.
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© 1990 American Institute of Physics.
1990
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