A tuning range of 200 nm has been achieved with a step‐graded multiquantum well InGaAs/InP laser in an external‐cavity configuration. Continuous, single‐mode lasing could be observed from 1440 to 1640 nm. Depending on the current density, the laser can operate both at the n=1 and n=2 quantized states. At low current density, the n=1 state gives higher gain, whereas for higher carrier densities, the n=2 level dominates. This gives rise to a flat gain profile and an extended operating range, in fact, the widest tuning range reported so far for semiconductor lasers.
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© 1990 American Institute of Physics.
1990
American Institute of Physics
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