Epitaxial layers of nominally undoped GaAs have been grown by metalorganic chemical vapor deposition using liquid tertiarybutylarsine and triethylgallium. n‐type layers were obtained having total residual shallow acceptor concentrations of ∼1013 cm−3 and Hall mobilities comparable to those obtained with arsine and triethylgallium in the same reactor. Liquid‐nitrogen Hall mobilities up to 116 000 cm2 /V s were observed.
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