Recently experimental results for a thin interface metal layer to control the Schottky barrier height of Ti/Pt/n‐GaAs and Pt/Ti/n‐GaAs contacts were presented [X. Wu, M. T. Schmidt, and E. S. Yang, Appl. Phys. Lett. 54, 268 (1989)]. In the present letter a possible explanation of the variation of the Schottky barrier height of the bi‐metal‐semiconductor contact is presented on the basis of the modification of the theory of the single‐layer metal‐semiconductor contact for the multilayer metal‐semiconductor contact. This model leads to an acceptable agreement between our theoretical results and the experimental results presented in the above‐mentioned paper and in an earlier publication [M. Hagio, H. Tagaki, A. Nagashima, and G. Kano, Solid‐State Electron. 22, 347 (1979)].

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