Recently experimental results for a thin interface metal layer to control the Schottky barrier height of Ti/Pt/n‐GaAs and Pt/Ti/n‐GaAs contacts were presented [X. Wu, M. T. Schmidt, and E. S. Yang, Appl. Phys. Lett. 54, 268 (1989)]. In the present letter a possible explanation of the variation of the Schottky barrier height of the bi‐metal‐semiconductor contact is presented on the basis of the modification of the theory of the single‐layer metal‐semiconductor contact for the multilayer metal‐semiconductor contact. This model leads to an acceptable agreement between our theoretical results and the experimental results presented in the above‐mentioned paper and in an earlier publication [M. Hagio, H. Tagaki, A. Nagashima, and G. Kano, Solid‐State Electron. 22, 347 (1979)].
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23 April 1990
Research Article|
April 23 1990
Theoretical explanation of the control of the Schottky barrier height using an ultrathin interface metal layer
T. Q. Tuy;
T. Q. Tuy
Research Institute for Technical Physics of Hungarian Academy of Sciences, Budapest, P. O. Box 76, H‐1325, Hungary
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I. Mojzes
I. Mojzes
Research Institute for Technical Physics of Hungarian Academy of Sciences, Budapest, P. O. Box 76, H‐1325, Hungary
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Appl. Phys. Lett. 56, 1652–1654 (1990)
Article history
Received:
August 02 1989
Accepted:
February 02 1990
Citation
T. Q. Tuy, I. Mojzes; Theoretical explanation of the control of the Schottky barrier height using an ultrathin interface metal layer. Appl. Phys. Lett. 23 April 1990; 56 (17): 1652–1654. https://doi.org/10.1063/1.103131
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