Thermally cracked tertiarybutylarsine and tertiarybutylphosphine were used to replace AsH3 and PH3 for the growth of Ga0.47In0.53As and InP by metalorganic molecular beam epitaxy. For both materials, carrier concentrations n=(1–2)×1015 cm−3 were obtained at 300 and 77 K, with 77 K mobilities of 29 000 and 31 000 cm2 V−1 s−1. The GaAs was p‐type with p=4×1015 cm−3 at both temperatures and a 77 K mobility of 2200 cm2 V−1 s−1. The lifetimes for carriers in 14–60 Å thick quantum wells were 3±1 ns. The reacting arsenic species for epitaxy were As2 and As4. The reacting phosphorus species were PH2 and possibly PH.
REFERENCES
1.
2.
S. H.
Lee
, C. A.
Larsen
, N. I.
Buchan
, and G. B.
Stringfellow
, J. Electron. Mater.
18
, 457
(1989
).3.
D. M. Speckman and J. P. Wendt, Second International Conference on Chemical Beam Epitaxy, Houston, Dec. 1989.
4.
G.
Haacke
, S. P.
Watkins
, and H.
Burkhard
, Appl. Phys. Lett.
54
, 2029
(1989
).5.
R. R.
Saxena
, J. E.
Fouquet
, V. M.
Sardi
, and R. L.
Moon
, Appl. Phys. Lett.
53
, 304
(1988
).6.
F. G.
Kellert
, J. S.
Whelan
, and K. T.
Chan
, J. Electron. Mater.
18
, 355
(1988
).7.
C. A.
Larsen
, N. I.
Buchan
, A. H.
Li
, and G. B.
Stringfellow
, J. Cryst. Growth
93
, 15
(1988
).8.
K.
Asahi
, Y.
Kawamura
, M.
Ikeda
, and H.
Okamoto
, J. Appl. Phys.
52
, 2852
(1981
).9.
10.
11.
D.
Gershoni
, H.
Temkin
, and M. B.
Panish
, Phys. Rev. B
38
, 7870
(1988
).12.
U.
Cebulla
, G.
Bacher
, G.
Mayer
, M.
Forchel
, W. T.
Tsang
, and M.
Razeghi
, Superlatt. Microstruct.
5
, 227
(1989
).
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© 1990 American Institute of Physics.
1990
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