Polycrystalline silicon has been grown by ArF excimer laser (193 nm) induced dissociation of Si2H6 adsorbed on a quartz substrate cooled to −69 °C. Silicon atomic layer growth has also been achieved by controlling the Si2H6 adsorbed layer thickness. It is found that the chemical reactivity of the first one monolayer of Si2H6 in contact with the growing Si surface is extremely high compared to that of the second or third Si2H6 layer. The effective photodissociation reaction rate at 193 nm for the first Si2H6 layer is estimated to be more than 40 times faster than that of an isolated Si2H6 molecule. Such high reactivity of the first monolayer is a possible mechanism of the self‐limiting process in the atomic layer growth.
REFERENCES
1.
T. Suntola, Extended Abstracts of the 16th (1984, Int.) Conference on Solid State Devices and Materials, Kobe, 1984 (Business Center for Academic Societies Japan, Tokyo, 1984), p. 647.
2.
J.
Nishizawa
, H.
Abe
, and T.
Kurabayashi
, J. Electrochem. Soc.
132
, 1197
(1985
).3.
A. Doi, Y. Aoyagi, and S. Namba, Materials Research Society Symposium Proceedings (Photon, Beam, and Plasma Stimulated Chemical Processing at Surfaces) No. 75, Boston 1986 (Material Research Society, Pittsburgh, 1986), p. 217.
4.
Y. Takahashi, Y. Sese, and T. Urisu, Digest of Papers 2nd MicroProcess Conference, Kobe 1989 (Business Center for Academic Societies Japan, Tokyo, 1989), p. 138.
5.
T.
Tanaka
, K.
Deguchi
, S.
Miyazaki
, and M.
Hirose
, Jpn. J. Appl. Phys.
27
, L2149
(1988
).6.
T.
Tanaka
, K.
Deguchi
, and M.
Hirose
, Jpn. J. Appl. Phys.
26
, 2057
(1987
).7.
T. Tanaka, T. Fukuda, Y. Nagasawa, S. Miyazaki, and M. Hirose, Proceedings of 1989 Dry Process Symposium Tokyo, 1989 (The Institute of Electrical Engineers of Japan, Tokyo, 1989), p. 103.
This content is only available via PDF.
© 1990 American Institute of Physics.
1990
American Institute of Physics
You do not currently have access to this content.
