High quality long‐wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine

High quality long‐wavelength InGaAsP/InP lasers were grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine (TBA) as a substitute for AsH₃. Electrical and photoluminescence measurements on InGaAs and InGaAsP showed that TBA‐grown material was at least as good as AsH₃ material in terms of suitability for lasers. From two wafers grown by TBA, current thresholds I_th as low as 11 mA were obtained for a 2‐μm‐wide semi‐insulating blocking planar buried heterostructure laser lasing near 1.3 μm wavelength. The differential quantum efficiencies η_D were as high as 21%/facet with a low internal loss α=21 cm⁻¹. In addition I_th as low as 18 mA and η_D as high as 18% have been obtained for multiplequantum well lasers at 1.54 μm wavelength. These results show that TBA might be used to replace AsH₃ without compromising on laser performance.