Trace impurities of vanadium in Lely‐grown silicon carbide single crystals have been detected by their strong, polytype‐specific photoluminescence in the 1.3–1.5 μm near‐infrared spectral range, as well as by infrared absorption. The spectra arise from the intra‐3d‐shell transitions 2E(3d1)→2T2(3d1) of V4+Si(3d1). Electron spin resonance reveals that VSi in SiC acts as a deep acceptor, V4+Si(3d1)/V3+Si(3d2)−̂A0/A−, and possibly also as a deep donor. The role of vanadium as minority‐carrier lifetime killer in SiC‐based optoelectronic devices is suggested from these data.
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© 1990 American Institute of Physics.
1990
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